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| Transistor 2SD2074 Silicon NPN epitaxial planer type For low-frequency output amplification For muting For DC-DC converter Unit: mm 6.90.1 0.15 1.05 2.50.1 0.05 (1.45) 0.8 0.5 4.50.1 0.7 4.0 q q q 0.45-0.05 0.45-0.05 +0.1 +0.1 2.50.5 2.50.5 2 3 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 25 20 12 1 0.5 1 150 -55 ~ +150 Unit V V V A A W C C 0.45+0.1 - 0.05 1.20.1 0.65 max. Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1:Emitter 2:Collector 3:Base MT2 Type Package Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion 2.50.1 s Absolute Maximum Ratings (Ta=25C) 1 (HW type) s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance ON resistanse (Ta=25C) Symbol ICBO VCBO VCEO VEBO hFE1*1 hFE2 VCE(sat) VBE(sat) fT Cob Ron*3 *3R on Conditions VCB = 25V, IE = 0 IC = 10A, IE = 0 IC = 1mA, IB = 0 IE = 10A, IC = 0 VCE = 2V, IC = 0.5A*2 VCE = 2V, IC = 1A*2 IC = 0.5A, IB = 20mA IC = 0.5A, IB = 50mA VCB = 10V, IE = -50mA, f = 200MHz VCB = 10V, IE = 0, f= 1MHz min typ max 100 14.50.5 q Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron. High foward current transfer ratio hFE. Allowing supply with the radial taping. 0.65 max. 1.0 1.0 s Features 0.2 Unit nA V V V 25 20 12 200 60 0.13 0.4 1.2 200 10 1.0 800 V V MHz pF Measurement circuit 1k *2 Pulse measurement *1h FE1 Rank classification R 200 ~ 350 S 300 ~ 500 T 400 ~ 800 IB=1mA f=1kHz V=0.3V Rank hFE1 VB VV VA VB Ron= !1000() VA-VB 1 Transistor PC -- Ta 1.2 1.2 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. IB=4.0mA 1.0 Ta=25C 3.5mA 3.0mA 0.8 2.5mA 2.0mA 0.6 1.5mA 0.4 1.0mA 0.5mA 0.2 2SD2074 IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=75C 25C -25C VCE(sat) -- IC IC/IB=25 Collector power dissipation PC (W) 1.0 0.8 0.6 0.4 0.2 0 0 40 80 120 160 200 Collector current IC (A) 0 0 1 2 3 4 5 6 0.1 0.3 1 3 10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) -- IC 100 hFE -- IC IC/IB=10 1200 VCE=2V 400 fT -- I E VCB=10V Ta=25C Base to emitter saturation voltage VBE(sat) (V) 1000 Transition frequency fT (MHz) 0.3 1 3 10 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=-25C 75C Forward current transfer ratio hFE 350 300 250 200 150 100 50 800 Ta=75C 600 25C -25C 400 25C 200 0.1 0.3 1 3 10 0 0.01 0.03 0.1 0 -1 -3 -10 -30 -100 Collector current IC (A) Collector current IC (A) Emitter current IE (mA) Cob -- VCB 24 Ron -- IB IE=0 f=1MHz Ta=25C 1000 300 Ron measuring circuit IB=1mA Collector output capacitance Cob (pF) 20 ON resistance Ron () 100 30 10 3 1 0.3 VB V VA 16 f=1kHz V=0.3V 12 8 4 0 1 3 10 30 100 0.1 0.01 0.03 0.1 0.3 1 3 10 Collector to base voltage VCB (V) Base current IB (mA) 2 |
Price & Availability of 2SD2074
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